Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment

Here, heterostructures composed of p+Si nanomembranes (NM)/n+GaAs were fabricated by ultraviolet/ozone (UV/O3, UVO) treatment, and their tunneling properties investigated. The hydrogen (H)-terminated Si NM was bonded to the oxygen (O)-terminated GaAs substrate, leading Si/GaAs tunnel junctions (TJs). atomic-scale features H-O-terminated TJ analyzed compared those heterojunctions with no UVO treatment. electrical characteristics demonstrated emergence negative differential resistance, an average peak-to-valley current ratio 3.49, which examined based on band-to-band thermionic emission theories.